・Vishay Gen 3 650 V and 1200 V, 1 A and 2 A SiC Schottky Diodes in the Compact SlimSMA HV (DO-221AC) Package Increase Efficiency While Enhancing Electrical Insulation, Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm
・Vishay Gen 3 650 V and 1200 V, 1 A and 2 A SiC Schottky Diodes in the Compact SlimSMA HV (DO-221AC) Package Increase Efficiency While Enhancing Electrical Insulation, Offer Low Capacitive Charge and High Minimum Creepage Distance of 3.2 mm